![]() Here, we establish a quantitative correlation between the width of the hysteresis window and the concentration of trapped or de-trapped charges. But as far as we know, no one has ever developed a quantitative model to find the density of defect states (including their distribution) from the hysteretic gate transfer characteristics. Condensed matter: An Institute of Physics Journal 22(33), 334214 (2010). ![]() The hysteresis in gate transfer characteristics is widely observed in field effect transistors, and attributed to the trapping and de-trapping of charge carriers by defect states. The nature of quasi Fermi level makes these methods less reliable. These methods rely the accurate finding of quasi Fermi level which, however, may not be flat in the entire semiconductors (in particular from bulk to surface). In recent years, we proposed some optoelectronic methods to probe the density of trap states in nanowires. However, these capacitive methods become increasingly difficult to be applicable for nanoscale and atomic scale devices because the tiny defect-associated capacitors in these devices are embedded in a relatively large parasitic capacitance network, making it extremely challenging to measure little variations in the defect-associated capacitance. have been successfully developed and widely used to probe the density of defects in semiconductors. and deep level transient spectroscopy (DLTS) 9–12 9. Brews, MOS (Metal-Oxide-Semiconductor) Physics and Technology ( Wiley, New York, 1982). In the past several decades, techniques such as capacitance vs. Finding the concentration of defects and their distribution in bandgap is always critical to the development of high-performance semiconductor devices. ![]() ![]() It is known that a high concentration of defects severely degrades the electronic and optical properties of semiconductors. As a result, the concentration of defects including those in bulk and on surfaces will significantly increase although the absolute number of defects is reduced. The surface-to-volume ratio increases as the device dimension scales down. ![]()
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